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Part Datasheet Search > BJTs > Microsemi > 2N2222A Datasheet PDF
2N2222A
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2N2222A Datasheet PDF (6 Pages)
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2N2222A Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
300 MHz
Number of Pins
3 Pin
Case/Package
TO-18
Power Dissipation
0.5 W
Breakdown Voltage (Collector to Emitter)
50 V
hFE Min
100 @150mA, 10V
Input Power (Max)
500 mW
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
500 mW

2N2222A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bag
Material
Silicon
Operating Temperature
-65℃ ~ 200℃ (TJ)

2N2222A Documents

Microsemi
6 Pages / 0.13 MByte
Microsemi
10 Pages / 0.36 MByte

2N2222 Documents

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ST Microelectronics
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ON Semiconductor
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National Semiconductor
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Micro Commercial Components
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Philips
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Continental Device
0.5W(1/2W) General Purpose NPN Metal Can Transistor. 30V Vceo, 0.8A Ic, 30 hFE.
Semicoa Semiconductor
Chip: geometry 0400; polarity NPN
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