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Part Datasheet Search > BJTs > ON Semiconductor > 2N6491G Datasheet PDF
2N6491G
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2N6491G Datasheet PDF (6 Pages)
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2N6491G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
5 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-80.0 V
Current Rating
15.0 A
Case/Package
TO-220-3
Number of Positions
3 Position
Polarity
PNP, P-Channel
Power Dissipation
1.8 W
Breakdown Voltage (Collector to Emitter)
80 V
Thermal Resistance
1.67℃/W (RθJC)
Continuous Collector Current
15A
hFE Min
20 @5A, 4V
hFE Max
150
Input Power (Max)
1.8 W
DC Current Gain (hFE)
5
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
1800 mW

2N6491G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10.28 mm
Size-Width
4.82 mm
Size-Height
15.75 mm
Operating Temperature
-65℃ ~ 150℃

2N6491G Documents

ON Semiconductor
6 Pages / 0.09 MByte
ON Semiconductor
7 Pages / 0.13 MByte
ON Semiconductor
2 Pages / 0.02 MByte
ON Semiconductor
6 Pages / 0.09 MByte
ON Semiconductor
5 Pages / 0.15 MByte
ON Semiconductor
1 Pages / 0.13 MByte

2N6491 Documents

ON Semiconductor
TO-220-3 PNP 80V 15A
Harris
Transistor,
Central Semiconductor
Power Transistors TO-220 Case
Intersil
2N6491
Microsemi
Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, PNP, Silicon, TO-220, Plastic/Epoxy, 2 Pin,
ST Microelectronics
2n6491, Transistor
Motorola
15A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB, PLASTIC, CASE 221A-06, 3 PIN
Continental Device
75W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 15A Ic, 20 - 150 hFE.
Fairchild
Transistor,
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