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Part Datasheet Search > BJTs > Toshiba > 2SA1943-O(Q) Datasheet PDF
2SA1943-O(Q)
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2SA1943-O(Q) Datasheet PDF (5 Pages)
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2SA1943-O(Q) Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
-230 V
Current Rating
-15.0 A
Case/Package
TO-3-3
Polarity
PNP
Power Dissipation
150000 mW
Breakdown Voltage (Collector to Emitter)
230 V
Continuous Collector Current
15A
hFE Min
80 @1A, 5V
Input Power (Max)
150 W
Operating Temperature (Max)
150 ℃
Power Dissipation (Max)
150 W

2SA1943-O(Q) Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
20.5 mm
Size-Width
5.2 mm
Size-Height
26 mm
Operating Temperature
150℃ (TJ)

2SA1943-O(Q) Documents

Toshiba
5 Pages / 0.33 MByte
Toshiba
3 Pages / 0.21 MByte
Toshiba
1 Pages / 0.17 MByte

2SA1943 Documents

Toshiba
Original Toshiba RoHS Compliant, Pb Free Bipolar PNP Audio Power Transistor, 230V, 15A, 150W, 2-21F1A Package
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PNP Epitaxial Silicon Transistor
UTC
TO-3PL PNP 230V 15A
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PNP Epitaxial Silicon Transistor
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Trans GP BJT PNP 230V 15A 3Pin TO-3PL
CJ
TO-3P PNP 230V 15000mA
SavantIC Semiconductor
Silicon PNP Power Transistors TO-3PL package
Unspecified
150W Silicon PNP Power Transistors
New Jersey Semiconductor
Trans GP BJT PNP 230V 15A 3Pin(3+Tab) TO-3PLE
TY Semiconductor
TO-3P Plastic-Encapsulate PNP Transistors
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