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BAV70LT1G
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BAV70LT1G Datasheet PDF (5 Pages)
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BAV70LT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
70.0 V
Current Rating
200 mA
Capacitance
1.50 pF
Case/Package
SOT-23-3
Halogen Free Status
Halogen Free
Load Current
0.2 A
Number of Positions
3 Position
Forward Voltage
1.25 V
Power Dissipation
300 mW
Reverse recovery time
6 ns
Forward Current
200 mA
Max Forward Surge Current (Ifsm)
500 mA
Maximum Forward Voltage (Max)
1.25 V
Forward Current (Max)
200 mA
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature (Max)
150 ℃
Power Dissipation (Max)
300 mW

BAV70LT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃

BAV70LT1G Documents

ON Semiconductor
5 Pages / 0.11 MByte
ON Semiconductor
14 Pages / 0.05 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
5 Pages / 0.31 MByte
ON Semiconductor
1 Pages / 0.13 MByte

BAV70LT1 Documents

ON Semiconductor
Diode Small Signal Switching 70V 0.2A 3Pin SOT-23 T/R
Motorola
CASE 318-08, STYLE 9 SOT-23 (TO-236AB)
Leshan Radio
Monolithic Dual Switching Diode Common Cathode
Silicon Standard
Rectifier Diode
Jiangsu Changjiang Electronics Technology
Rectifier Diode, 0.2A, 70V V(RRM)
Transys Electronics
Rectifier Diode, 0.2A, 70V V(RRM)
National Semiconductor
ON Semiconductor
ON SEMICONDUCTOR BAV70LT1G Small Signal Diode, Dual Common Cathode, 70V, 200mA, 1.25V, 6ns, 500mA
Leshan Radio
Rectifier Diode, 2 Element, 0.1A, 70V V(RRM), Silicon,
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