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BC848BLT1G
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BC848BLT1G Datasheet PDF (13 Pages)
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BC848BLT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
100 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
30.0 V
Current Rating
100 mA
Case/Package
SOT-23-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
300 mW
Breakdown Voltage (Collector to Emitter)
30 V
Continuous Collector Current
0.1A
hFE Min
200
Input Power (Max)
300 mW
DC Current Gain (hFE)
200
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

BC848BLT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BC848BLT1G Documents

ON Semiconductor
13 Pages / 0.16 MByte
ON Semiconductor
22 Pages / 1.31 MByte
ON Semiconductor
8 Pages / 0.09 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
13 Pages / 0.13 MByte
ON Semiconductor
1 Pages / 0.13 MByte

BC848BLT1 Documents

ON Semiconductor
SOT-23 NPN 30V 0.1A
Motorola
Trans Npn 30V 0.1A Sot23
Leshan Radio
General Purpose Transistors(NPN Silicon)
SynSemi
Small Signal Bipolar Transistor, 0.1A I(C), NPN
Jiangsu Changjiang Electronics Technology
Transistor
ON Semiconductor
SOT-23 NPN 30V 0.1A
Leshan Radio
Small Signal Bipolar Transistor,
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