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Part Datasheet Search > BJTs > ON Semiconductor > BC857BTT1G Datasheet PDF
BC857BTT1G
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BC857BTT1G Datasheet PDF (5 Pages)
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BC857BTT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
100 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-45.0 V
Current Rating
-100 mA
Case/Package
SC-75-3
Number of Positions
3 Position
Polarity
PNP
Power Dissipation
200 mW
Breakdown Voltage (Collector to Emitter)
45 V
Continuous Collector Current
0.1A
hFE Min
220 @2mA, 5V
Input Power (Max)
200 mW
DC Current Gain (hFE)
150
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-50 ℃
Power Dissipation (Max)
200 mW

BC857BTT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
1.65 mm
Size-Width
0.9 mm
Size-Height
0.9 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BC857BTT1G Documents

ON Semiconductor
5 Pages / 0.06 MByte
ON Semiconductor
79 Pages / 0.54 MByte

BC857BTT1 Documents

ON Semiconductor
SOT-416 PNP 45V 0.1A
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), PNP,
ON Semiconductor
SOT-416 PNP 45V 0.1A
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), PNP,
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