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Part Datasheet Search > BJTs > ON Semiconductor > BDW42G Datasheet PDF
BDW42G
$ 0.909
BDW42G Datasheet PDF (7 Pages)
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BDW42G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
15.0 A
Case/Package
TO-220-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
85 W
Breakdown Voltage (Collector to Emitter)
100 V
Continuous Collector Current
15A
hFE Min
1000 @5A, 4V
Input Power (Max)
85 W
DC Current Gain (hFE)
1000
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Gain Bandwidth
4MHz (Min)
Power Dissipation (Max)
85000 mW

BDW42G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.28 mm
Size-Width
4.82 mm
Size-Height
9.28 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BDW42G Documents

ON Semiconductor
7 Pages / 0.08 MByte
ON Semiconductor
20 Pages / 2.6 MByte
ON Semiconductor
2 Pages / 0.02 MByte
ON Semiconductor
7 Pages / 0.1 MByte
ON Semiconductor
5 Pages / 0.15 MByte

BDW42 Documents

ON Semiconductor
TO-220-3 NPN 100V 15A
Motorola
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Inchange Semiconductor
Transistor
TT Electronics Resistors
Transistor
New Jersey Semiconductor
Trans Darlington NPN 100V 15A 3Pin(3+Tab) TO-220AB Rail
Iskra
Transistor
Semelab
TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,15A I(C),TO-220AB
ON Semiconductor
TO-220AB NPN 100V 15A
ON Semiconductor
Darlington Complementary Silicon Power Transistors
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