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Part Datasheet Search > BJTs > ST Microelectronics > BDX33C Datasheet PDF
BDX33C
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BDX33C Datasheet PDF (4 Pages)
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BDX33C Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
70 W
Breakdown Voltage (Collector to Emitter)
100 V
hFE Min
750 @3A, 3V
Input Power (Max)
70 W
DC Current Gain (hFE)
750
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
70000 mW

BDX33C Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
9.15 mm
Operating Temperature
150℃ (TJ)

BDX33C Documents

ST Microelectronics
4 Pages / 0.08 MByte
ST Microelectronics
17 Pages / 0.18 MByte
ST Microelectronics
6 Pages / 0.09 MByte
ST Microelectronics
30 Pages / 0.31 MByte

BDX33 Documents

Bourns J.W. Miller
Darlington Transistors 70W 10A NPN
Fairchild
Darlington Transistors
Motorola
Transistor
ON Semiconductor
10 A, 100 V NPN Darlington Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE
Samsung
Power Bipolar Transistor, 10A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Continental Device
Power Bipolar Transistor, 10A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
GE
Power Bipolar Transistor
Poinn
NPN SILICON POWER DARLINGTONS
Mospec
POWER TRANSISTORS(10A,70W)
ST Microelectronics
10A, 45V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
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