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Part Datasheet Search > BJTs > ST Microelectronics > BU508AF Datasheet PDF
BU508AF
$ 0.513

BU508AF Datasheet PDF - ST Microelectronics

Manufacturer:
ST Microelectronics
Category:
BJTs
Case Package:
ISOWATT-218
Description:
Trans GP BJT NPN 700V 8A 50000mW 3Pin(3+Tab) ISOWATT218FX Tube
Pictures:
3D Model
Symbol
Footprint
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Product Pictures
Documentation:
BU508AF Datasheet (11 Pages)
Package Outline Dimension on8 Page9 Page
BU508AF Datasheet PDF (11 Pages)
View Datasheet
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BU508AF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
ISOWATT-218
Polarity
NPN
Power Dissipation
50 W
Breakdown Voltage (Collector to Emitter)
700 V
hFE Min
10 @100mA, 5V
Input Power (Max)
50 W
DC Current Gain (hFE)
30
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
50000 mW
View Datasheet >

BU508AF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
150℃ (TJ)
View Datasheet >

BU508AF Documents

BU508AF Datasheet
ST Microelectronics
11 Pages / 0.2 MByte

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