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BU508AW
$ 0.434
BU508AW Datasheet PDF (11 Pages)
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BU508AW Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
125 W
Breakdown Voltage (Collector to Emitter)
700 V
hFE Min
10 @100mA, 5V
hFE Max
10
Input Power (Max)
125 W
DC Current Gain (hFE)
5
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
125000 mW

BU508AW Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.75 mm
Size-Width
5.15 mm
Size-Height
20.15 mm
Operating Temperature
150℃ (TJ)

BU508AW Documents

ST Microelectronics
11 Pages / 0.2 MByte
ST Microelectronics
12 Pages / 0.19 MByte
ST Microelectronics
32 Pages / 0.51 MByte

BU508 Documents

Mospec
POWER TRANSISTORS(5A,1500V,125W)
Central Semiconductor
Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin,
ON Semiconductor
8A, 700V, NPN, Si, POWER TRANSISTOR, TO-218AC, CASE 340-02, 3 PIN
Micro Commercial Components
Power Bipolar Transistor, 8A I(C), 1500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3FA, 3 PIN
NXP
8A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, SOT-199, 3 PIN
ST Microelectronics
8A, 700V, NPN, Si, POWER TRANSISTOR, TO-218
Fairchild
Power Bipolar Transistor, 5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN
Thomas & Betts
Thomas & Betts BU508 3" Non-metallic Insulated Bushing Steel City BU508
Samsung
Power Bipolar Transistor, 5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
UTC
Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, TO-3PML, 3 PIN
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