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Part Datasheet Search > TVS Diodes > ST Microelectronics > BZW50-33B Datasheet PDF
BZW50-33B
$ 0.736
BZW50-33B Datasheet PDF (10 Pages)
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BZW50-33B Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
2 Pin
Voltage Rating (DC)
33.0 V
Case/Package
R-6
Power Rating
5.00 kW
Breakdown Voltage
36.6 V
Number of Circuits
1 Circuit
Number of Positions
2 Position
Power Dissipation
5 kW
Clamping Voltage
76 V
Test Current
1 mA
Max Breakdown Voltage
36.6 V
Peak Pulse Power
5000 W
Min Breakdown Voltage
36.6 V
Reverse Breakdown Voltage
36.6 V
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-65 ℃
Junction Temperature
175 ℃

BZW50-33B Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Each
Size-Length
9.1 mm
Size-Width
9.1 mm
Size-Height
9.1 mm
Size-Diameter
9.10 mm
Operating Temperature
-65℃ ~ 175℃

BZW50-33B Documents

ST Microelectronics
10 Pages / 0.31 MByte
ST Microelectronics
9 Pages / 0.11 MByte
ST Microelectronics
5 Pages / 0.13 MByte

BZW5033 Documents

ST Microelectronics
STMICROELECTRONICS BZW50-33 TVS Diode, BZW50 Series, Unidirectional, 33V, 76V, R6, 2Pins
ST Microelectronics
STMICROELECTRONICS BZW5033 TVS Diode, BZW50 Series, Unidirectional, 33V, 76V, Axial Leaded, 2Pins
EIC
Transient Suppressor,
Fagor Electronica
Trans Voltage Suppressor Diode, 33V V(RWM), Unidirectional
ST Microelectronics
STMICROELECTRONICS BZW50-33B TVS Diode, Transil BZW50 Series, Bidirectional, 33V, 76V, R6, 2Pins
ST Microelectronics
33V 5000W
ST Microelectronics
33V 5000W
EIC
Transient Suppressor,
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