DE275X2-102N06A Datasheet PDF - IXYS Semiconductor

●The DE275X2-102N06A is a matched pair RF power MOSFET device in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65MHz very low insertion inductance and isolated substrate with excellent thermal transfer. Low gate charge and capacitances easier to drive and no beryllium oxide or other hazardous materials.

● N-channel enhancement mode

● Common source push-pull pair

● Low Qg and Rg

● High dv/dt rating

● Nanosecond switching

● Low insertion inductance