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FDC638P Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

MOSFETs

Case Package:

TSOT-23-6

Description:

FAIRCHILD SEMICONDUCTOR FDC638P MOSFET Transistor, P Channel, 4.5A, -20V, 0.039Ω, 12V, -800mV

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Documentation:

FDC638P Datasheet (5 Pages)

FDC638P Datasheet PDF (5 Pages)

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FDC638P Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

6 Pin

Voltage Rating (DC)

-20.0 V

Current Rating

-4.50 A

Case/Package

TSOT-23-6

Number of Channels

1 Channel

Number of Positions

6 Position

Drain to Source Resistance (on) (Rds)

0.039 Ω

Polarity

P-Channel

Power Dissipation

1.6 W

Input Capacitance

1.16 nF

Gate Charge

10.0 nC

Drain to Source Voltage (Vds)

20 V

Breakdown Voltage (Drain to Source)

20 V

Breakdown Voltage (Gate to Source)

±8.00 V

Continuous Drain Current (Ids)

-4.50 A

Rise Time

9 ns

Input Capacitance (Ciss)

1160pF @10V(Vds)

Input Power (Max)

800 mW

Fall Time

12 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1.6 W

View Datasheet >

FDC638P Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

3 mm

Size-Width

1.7 mm

Size-Height

1 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

FDC638P Environmental

FDC638P Export Classifications

FDC638P Function Overview

FDC638P Documents

FDC638P Datasheet

Fairchild

5 Pages / 0.1 MByte

FDC638P Other Datasheet PDF

Fairchild

8 Pages / 0.09 MByte

FDC638P Features Description Parametrics

Fairchild

5 Pages / 0.46 MByte

FDC638P Product Catalog

Fairchild

4 Pages / 0.19 MByte

FDC638P Other References

Fairchild

1 Pages / 0.14 MByte

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