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Part Datasheet Search > IGBTs > Infineon > IHW30N160R2 Datasheet PDF
IHW30N160R2
$ 4.531
IHW30N160R2 Datasheet PDF (12 Pages)
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IHW30N160R2 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Rating
312 W
Number of Positions
3 Position
Power Dissipation
312 W
Breakdown Voltage (Collector to Emitter)
1600 V
Input Power (Max)
312 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
312 W

IHW30N160R2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.13 mm
Size-Width
5.21 mm
Size-Height
21.1 mm
Operating Temperature
-40℃ ~ 175℃ (TJ)

IHW30N160R2 Documents

Infineon
12 Pages / 0.38 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
48 Pages / 2 MByte

IHW30N160 Documents

Infineon
Trans IGBT Chip N-CH 1600V 60A 312000mW 3Pin(3+Tab) TO-247 Tube
Infineon
IGBT Single Transistor, 60A, 1.8V, 312W, 1.6kV, TO-247, 3Pins
Infineon
Trans IGBT Chip N-CH 1600V 60A 312000mW 3Pin(3+Tab) TO-247
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