IKW30N60H3 Datasheet PDF - Infineon

●The IKW30N60H3 is a 600V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.

● Low switching losses for high efficiency

● Fast switching behaviour with low EMI emissions

● Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour

● Short circuit capability

● Excellent performance

● Low switching and conduction losses