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Part Datasheet Search > MOSFETs > International Rectifier > IRF5210STRLPBF Datasheet PDF
IRF5210STRLPBF
$ 1.873
IRF5210STRLPBF Datasheet PDF (11 Pages)
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IRF5210STRLPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.06 Ω
Polarity
P-Channel
Power Dissipation
3.1 W
Part Family
IRF5210S
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
-40.0 A
Input Capacitance (Ciss)
2780pF @25V(Vds)
Input Power (Max)
3.1 W
Operating Temperature (Max)
175 ℃

IRF5210STRLPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)

IRF5210STRLPBF Documents

International Rectifier
11 Pages / 0.18 MByte
International Rectifier
10 Pages / 0.3 MByte
International Rectifier
9 Pages / 0.14 MByte

IRF5210 Documents

International Rectifier
Trans MOSFET P-CH 100V 40A 3Pin(3+Tab) TO-220AB
Infineon
TO-220AB P-CH 100V 40A
Semelab
40A, 100V, 0.07ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3
TT Electronics Resistors
Power Field-Effect Transistor, 40A I(D), 100V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
New Jersey Semiconductor
Trans MOSFET P-CH 100V 40A 3-Pin(2+Tab) D2PAK
IRF
Power MOSFET(Vdss=-100V, Rds(on)=0.06Ω, Id=-40A)
Infineon
TO-220AB P-CH 100V 40A
Infineon
D2PAK P-CH 100V 38A
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.06Ω; ID -40A; TO-220AB; PD 200W; VGS +/-20
International Rectifier
INTERNATIONAL RECTIFIER IRF5210STRLPBF MOSFET Transistor, P Channel, 40A, 100V, 60mohm, -10V, 4V
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