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Part Datasheet Search > MOSFETs > International Rectifier > IRF530NPBF Datasheet PDF
IRF530NPBF
$ 1.191
IRF530NPBF Datasheet PDF (9 Pages)
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IRF530NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
17.0 A
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.09 Ω
Polarity
N-Channel
Power Dissipation
70 W
Part Family
IRF530N
Threshold Voltage
4 V
Input Capacitance
920pF @25V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
17.0 A
Rise Time
22 ns
Input Capacitance (Ciss)
920pF @25V(Vds)
Input Power (Max)
70 W
Fall Time
25 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
70000 mW

IRF530NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.54 mm
Size-Height
15.24 mm
Operating Temperature
-55℃ ~ 175℃

IRF530NPBF Documents

International Rectifier
9 Pages / 0.21 MByte
International Rectifier
20 Pages / 2.6 MByte
International Rectifier
3 Pages / 0.04 MByte
International Rectifier
9 Pages / 0.18 MByte

IRF530 Documents

VISHAY
Trans MOSFET N-CH 100V 14A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 100V 14A 3Pin(3+Tab) TO-220AB
ST Microelectronics
Trans MOSFET N-CH 100V 14A 3Pin(3+Tab) TO-220
International Rectifier
MOSFET N-CH 100V 14A TO-220
Vishay Siliconix
MOSFET N-CH 100V 14A TO-220AB
ON Semiconductor
TMOS POWER FET 14 AMPERES, 100 VOLTS RDS(on) = 0.14Ω
Fairchild
Trans MOSFET N-CH Si 100V 14A 3Pin(3+Tab) TO-220AB
Harris
(IRF530 - IRF533) N-Channel Power MOSFETs Avalanche Energy Rated
Motorola
N-channel MOSFET, 60V, 14A
Infineon
Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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