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Part Datasheet Search > MOSFETs > International Rectifier > IRF630NPBF Datasheet PDF
IRF630NPBF
$ 0.229
IRF630NPBF Datasheet PDF (8 Pages)
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IRF630NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
9.30 A
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
0.3 Ω
Polarity
N-Channel
Power Dissipation
82 W
Part Family
IRF630N
Input Capacitance
575pF @25V
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Continuous Drain Current (Ids)
9.30 A
Rise Time
14 ns
Thermal Resistance
1.83℃/W (RθJC)
Input Capacitance (Ciss)
575pF @25V(Vds)
Input Power (Max)
82 W
Fall Time
15 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
82000 mW

IRF630NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.67 mm
Size-Height
9.02 mm
Operating Temperature
-55℃ ~ 175℃

IRF630NPBF Documents

International Rectifier
8 Pages / 0.62 MByte
International Rectifier
20 Pages / 2.6 MByte
International Rectifier
3 Pages / 0.04 MByte

IRF630 Documents

ST Microelectronics
N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET
VISHAY
Trans MOSFET N-CH 200V 9A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET N-CH 200V 9A 3Pin TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 200V 9A 3Pin(3+Tab) TO-220AB
Intersil
9A, 200V, 0.4Ω, N-Channel Power MOSFETs
International Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Harris
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ON Semiconductor
IRF630
Vishay Siliconix
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
NXP
9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC PACKAGE-3
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