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Part Datasheet Search > MOSFETs > International Rectifier > IRF7601PBF Datasheet PDF
IRF7601PBF
$ 0.068
IRF7601PBF Datasheet PDF (8 Pages)
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IRF7601PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
Micro-8
Drain to Source Resistance (on) (Rds)
0.05 Ω
Polarity
N-Channel
Power Dissipation
1.8 W
Part Family
IRF7601
Input Capacitance
650pF @15V
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
5.70 A
Input Capacitance (Ciss)
650pF @15V(Vds)
Input Power (Max)
1.8 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

IRF7601PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
3.05 mm
Size-Height
0.91 mm
Operating Temperature
-55℃ ~ 150℃

IRF7601PBF Documents

International Rectifier
8 Pages / 0.11 MByte
International Rectifier
4 Pages / 0.2 MByte

IRF7601 Documents

International Rectifier
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Infineon
Micro N-CH 20V 5.7A
IRF
Power MOSFET(Vdss=20V, Rds(on)=0.035Ω)
Infineon
Micro N-CH 20V 5.7A
Infineon
Micro N-CH 20V 5.7A
International Rectifier
Trans MOSFET N-CH 20V 5.7A 8Pin Micro T/R
International Rectifier
MOSFET 20V 1 N-CH HEXFET 35mOhms 14NC
International Rectifier
Trans MOSFET N-CH Si 20V 5.7A 8Pin Micro T/R
Infineon
Micro N-CH 20V 5.7A
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