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IRF7809AV
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IRF7809AV Datasheet PDF (8 Pages)
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IRF7809AV Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Voltage Rating (DC)
30.0 V
Current Rating
17.0 A
Case/Package
SOIC-8
Drain to Source Resistance (on) (Rds)
7.00 MΩ
Polarity
N-Channel
Power Dissipation
2.5W (Ta)
Part Family
IRF7809AV
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30.0V (min)
Continuous Drain Current (Ids)
13.3 A
Rise Time
36 ns
Input Capacitance (Ciss)
3780pF @16V(Vds)
Fall Time
10 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta)

IRF7809AV Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7809AV Documents

Infineon
8 Pages / 0.57 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
8 Pages / 0.19 MByte
Infineon
37 Pages / 2.01 MByte

IRF7809 Documents

Infineon
MOSFET N-CH 30V 17.6A 8-SOIC
International Rectifier
Infineon
SOIC N-CH 30V 13.3A
Infineon
SOIC N-CH 30V 13.3A
International Rectifier
Trans MOSFET N-CH 30V 13.3A 8Pin SOIC Tube
International Rectifier
Trans MOSFET N-CH 30V 13.3A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 13.3A 8Pin SOIC
International Rectifier
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC N-CH 30V 13.3A
Infineon
SOIC N-CH 30V 17.6A
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