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Part Datasheet Search > MOSFETs > Infineon > IRF9Z24NPBF Datasheet PDF
IRF9Z24NPBF
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IRF9Z24NPBF Datasheet PDF (9 Pages)
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IRF9Z24NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
45 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.175 Ω
Polarity
P-Channel
Power Dissipation
45 W
Threshold Voltage
4 V
Input Capacitance
350 pF
Drain to Source Voltage (Vds)
55 V
Breakdown Voltage (Drain to Source)
55 V
Continuous Drain Current (Ids)
12A
Rise Time
55 ns
Input Capacitance (Ciss)
350pF @25V(Vds)
Input Power (Max)
45 W
Fall Time
37 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
45W (Tc)

IRF9Z24NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10 mm
Size-Width
4.4 mm
Size-Height
8.77 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF9Z24NPBF Documents

Infineon
9 Pages / 0.49 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte

IRF9Z24 Documents

International Rectifier
MOSFET P-CH 60V 11A TO-220AB
VISHAY
MOSFET P-CH 60V 11A TO-220AB
Vishay Siliconix
MOSFET P-CH 60V 11A TO-220AB
Samsung
P-CHANNEL POWER MOSFETs
Vishay Semiconductor
MOSFET P-CH 60V 11A TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Fairchild
Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Infineon
Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
IRF
POWER MOSFET
Infineon
TO-220AB P-CH 55V 12A
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