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IRF9Z34NPBF
$ 0.155
IRF9Z34NPBF Datasheet PDF (9 Pages)
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IRF9Z34NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
68 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.1 Ω
Polarity
P-Channel
Power Dissipation
56 W
Input Capacitance
620 pF
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
19A
Rise Time
55 ns
Input Capacitance (Ciss)
620pF @25V(Vds)
Input Power (Max)
68 W
Fall Time
41 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
68W (Tc)

IRF9Z34NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.54 mm
Size-Width
4.69 mm
Size-Height
8.77 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF9Z34NPBF Documents

Infineon
9 Pages / 0.23 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
3 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte

IRF9Z34 Documents

VISHAY
TO-220AB P-CH 60V 18A
International Rectifier
-60V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Vishay Semiconductor
Trans MOSFET P-CH 60V 18A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET P-CH 60V 18A TO-220AB
Infineon
Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Samsung
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Kersemi Electronic
Power MOSFET
Infineon
TO-220AB P-CH 55V 19A
Infineon
D2PAK P-CH 55V 19A
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