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Part Datasheet Search > MOSFETs > Infineon > IRFB4227PBF Datasheet PDF
IRFB4227PBF
$ 0.598
IRFB4227PBF Datasheet PDF (8 Pages)
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IRFB4227PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
190 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0197 Ω
Polarity
N-Channel
Power Dissipation
330 W
Threshold Voltage
5 V
Input Capacitance
4600 pF
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Continuous Drain Current (Ids)
65A
Rise Time
20 ns
Input Capacitance (Ciss)
4600pF @25V(Vds)
Input Power (Max)
330 W
Fall Time
31 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
330W (Tc)

IRFB4227PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.66 mm
Size-Width
4.82 mm
Size-Height
9.02 mm
Operating Temperature
-40℃ ~ 175℃ (TJ)

IRFB4227PBF Documents

Infineon
8 Pages / 0.27 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
2 Pages / 0.09 MByte

IRFB4227 Documents

Infineon
TO-220AB N-CH 200V 65A
International Rectifier
200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB package
Infineon
TO-220AB N-CH 200V 65A
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 19.7 Milliohms; ID 65A; TO-220AB; PD 330W
IFA
N-Channel 200V 24mΩ 70NC Flange Mount Hexfet Power Mosfet - TO-220AB
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