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IRFS7530TRL7PP Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

MOSFETs

Case Package:

TO-263-7

Description:

D2PAK N-CH 60V 338A

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IRFS7530TRL7PP Datasheet (11 Pages)

Package Outline Dimension on9 Page

IRFS7530TRL7PP User Reference Manual Guide (270 Pages)IRFS7530TRL7PP Application Note (37 Pages)

IRFS7530TRL7PP Datasheet PDF (11 Pages)

View Datasheet

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IRFS7530TRL7PP Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

7 Pin

Case/Package

TO-263-7

Power Rating

375 W

Number of Positions

7 Position

Drain to Source Resistance (on) (Rds)

0.00115 Ω

Polarity

N-Channel

Power Dissipation

375 W

Threshold Voltage

3.7 V

Drain to Source Voltage (Vds)

60 V

Continuous Drain Current (Ids)

338A

Rise Time

102 ns

Input Capacitance (Ciss)

12960pF @25V(Vds)

Fall Time

79 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

375000 mW

View Datasheet >

IRFS7530TRL7PP Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Material

Silicon

Size-Length

10.67 mm

Size-Width

9.65 mm

Size-Height

4.83 mm

Operating Temperature

-55℃ ~ 175℃ (TJ)

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IRFS7530TRL7PP Environmental

IRFS7530TRL7PP Export Classifications

IRFS7530TRL7PP Function Overview

IRFS7530TRL7PP Documents

IRFS7530TRL7PP Datasheet

Infineon

11 Pages / 0.55 MByte

IRFS7530TRL7PP User Reference Manual Guide

Infineon

270 Pages / 11.59 MByte

IRFS7530TRL7PP Other Datasheet PDF

Infineon

30 Pages / 0.64 MByte

IRFS7530TRL7PP Drawing Diagrams

Infineon

2 Pages / 0.17 MByte

IRFS7530TRL7PP Application Note

Infineon

37 Pages / 2.01 MByte

IRFS7530TRL7PP Notice File

Infineon

3 Pages / 0.19 MByte

IRFS7530TRL7 Documents

IRFS7530TRL7PP Datasheet PDF

Infineon

D2PAK N-CH 60V 338A

IRFS7530TRL7PP Datasheet PDF

International Rectifier

The IRFS7530TRL7PP is a 60V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. The StrongIRFET™ HEXFET® power MOSFET is suitable for battery powered circuits, synchronous rectifier applications, half-bridge and full-bridge topologies.