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IRLB3034PBF
$ 0.697
IRLB3034PBF Datasheet PDF (8 Pages)
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IRLB3034PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
375 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0014 Ω
Polarity
N-CH
Power Dissipation
375 W
Threshold Voltage
2.5 V
Input Capacitance
10315pF @25V
Drain to Source Voltage (Vds)
40 V
Breakdown Voltage (Drain to Source)
40 V
Continuous Drain Current (Ids)
343A
Rise Time
827 ns
Input Capacitance (Ciss)
10315pF @25V(Vds)
Input Power (Max)
375 W
Fall Time
355 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
375W (Tc)

IRLB3034PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10 mm
Size-Width
4.4 mm
Size-Height
15.65 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRLB3034PBF Documents

Infineon
8 Pages / 0.28 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.19 MByte

IRLB3034 Documents

International Rectifier
MOSFET N-CH 40V 195A TO220AB
Infineon
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Infineon
TO-220AB N-CH 40V 343A
International Rectifier
Trans MOSFET N-CH 40V 343A 3Pin(3+Tab) TO-220AB Tube
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