IRLML6401TRPBF Datasheet PDF - International Rectifier

●These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device

●for use in battery and load management. A thermally enhanced large pad lead frame has been incorporated into the standard SOT-23 package to produce a HEXFET® Power MOSFET with the industry"s smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1 mm) of the Micro3™ allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.

●Features:

● Ultra Low On-Resistance

● P-Channel MOSFET

● SOT-23 Footprint

● Low Profile (<1.1 mm)

● Available in Tape and Reel

● Fast Switching

● 1.8 V Gate Rated