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Part Datasheet Search > MOSFETs > Infineon > IRLU3410PBF Datasheet PDF
IRLU3410PBF
$ 0.389
IRLU3410PBF Datasheet PDF (11 Pages)
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IRLU3410PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-251-3
Power Rating
52 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.105 Ω
Polarity
N-Channel
Power Dissipation
52 W
Threshold Voltage
2 V
Input Capacitance
800pF @25V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
17A
Input Capacitance (Ciss)
800pF @25V(Vds)
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
79W (Tc)

IRLU3410PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube
Size-Length
6.73 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRLU3410PBF Documents

Infineon
11 Pages / 0.27 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
6 Pages / 0.15 MByte
Infineon
1 Pages / 0.15 MByte

IRLU3410 Documents

Infineon
IPAK N-CH 100V 17A
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Infineon
IPAK N-CH 100V 17A
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.105Ω; ID 17A; I-Pak (TO-251AA); PD 79W
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