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Part Datasheet Search > High Voltage MOS > IXYS Semiconductor > IXTP3N120 Datasheet PDF
IXTP3N120
$ 1.881
IXTP3N120 Datasheet PDF (5 Pages)
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IXTP3N120 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
1.20 kV
Current Rating
3.00 A
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
4.5 Ω
Polarity
N-Channel
Power Dissipation
200 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
1.2 kV
Continuous Drain Current (Ids)
3.00 A
Rise Time
35 ns
Reverse recovery time
700 ns
Input Capacitance (Ciss)
1350pF @25V(Vds)
Input Power (Max)
200 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200W (Tc)

IXTP3N120 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTP3N120 Documents

IXYS Semiconductor
5 Pages / 0.16 MByte
IXYS Semiconductor
20 Pages / 2.6 MByte

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