MBRS360BT3G Datasheet PDF - ON Semiconductor

●The MBRS360BT3G is a surface-mount Schottky Power Rectifier with epoxy moulded case. It employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectification or as free-wheeling and polarity protection diodes, in applications where compact size and weight are critical to the system.

● Notch in plastic body indicates cathode lead

● Highly stable oxide passivated junction

● Excellent ability to withstand reverse avalanche energy transients

● Guard-ring for stress protection

● AEC-Q101 qualified and PPAP capable

● All external surfaces corrosion-resistant