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Part Datasheet Search > BJTs > ON Semiconductor > MBT3946DW1T1G Datasheet PDF
MBT3946DW1T1G
$ 0.021
MBT3946DW1T1G Datasheet PDF (11 Pages)
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MBT3946DW1T1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
300 MHz
Number of Pins
6 Pin
Voltage Rating (DC)
40.0 V
Current Rating
200 mA
Case/Package
SC-70-6
Number of Positions
6 Position
Polarity
NPN, PNP
Power Dissipation
150 mW
Breakdown Voltage (Collector to Emitter)
40 V
Continuous Collector Current
0.2A
hFE Min
100 @10mA, 1V
Input Power (Max)
150 mW
DC Current Gain (hFE)
300
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
150 mW

MBT3946DW1T1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2.2 mm
Size-Width
1.35 mm
Size-Height
1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MBT3946DW1T1G Documents

ON Semiconductor
11 Pages / 0.16 MByte
ON Semiconductor
36 Pages / 0.15 MByte
ON Semiconductor
20 Pages / 0.22 MByte
ON Semiconductor
1 Pages / 0.16 MByte

MBT3946DW1T1 Documents

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Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
ON Semiconductor
SC-88 NPN+PNP 40V 0.2A
Leshan Radio
Small Signal Bipolar Transistor, 0.2A I(C), NPN and PNP,
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