MJ11032G Datasheet PDF - ON Semiconductor

Bipolar (BJT) Single Transistor, Darlington, NPN, 120V, 300W, 50A, 1000 hFE

TO-204-2/TO-3-2 NPN 120V 50A

SEMELAB MJ11032 Bipolar (BJT) Single Transistor, Darlington, NPN, 120V, 300W, 50A, 1000 hFE

TRANS NPN DARL 120V 50A TO3

NTE ELECTRONICS MJ11032 On Semiconductor Transistor, IC Max: 50A, VCEO(sus) Min: 120V, Forward Current Transfer Ratio Min: 400, PTM Max: 300W, Type:

Trans Darlington NPN 120V 50A 300000mW 3Pin(2+Tab) TO-3

Power Bipolar Transistor, 50A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

Power Bipolar Transistor, 50A I(C), 1-Element, NPN, Silicon, Metal, 2 Pin, MODIFIED TO-3, 2 PIN

Trans Darlington NPN 120V 50A 3Pin(2+Tab) TO-204 Tray