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Part Datasheet Search > BJTs > ON Semiconductor > MJD44H11-1G Datasheet PDF
MJD44H11-1G
$ 0.345

MJD44H11-1G Datasheet PDF - ON Semiconductor

Manufacturer:
ON Semiconductor
Category:
BJTs
Case Package:
TO-251-3
Description:
IPAK NPN 80V 8A
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
MJD44H11-1G Datasheet (9 Pages)
Package Outline Dimension on8 Page9 Page
Package Footprint Pad Layout on8 Page
Part Numbering System on1 Page7 Page9 Page
MJD44H11-1G Application Note (13 Pages)
MJD44H11-1G Datasheet PDF (9 Pages)
View Datasheet
Click page to view the detail

MJD44H11-1G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
85 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
80.0 V
Current Rating
8.00 A
Case/Package
TO-251-3
Halogen Free Status
Halogen Free
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
20 W
Gain Bandwidth Product
85 MHz
Breakdown Voltage (Collector to Emitter)
80 V
Continuous Collector Current
8A
hFE Min
60
Input Power (Max)
1.75 W
DC Current Gain (hFE)
60
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
1750 mW
View Datasheet >

MJD44H11-1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
6.73 mm
Size-Width
2.38 mm
Size-Height
6.35 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

MJD44H11-1G Documents

MJD44H11-1G Datasheet
ON Semiconductor
9 Pages / 0.08 MByte
MJD44H11-1G Other Datasheet PDF
ON Semiconductor
7 Pages / 0.07 MByte
MJD44H11-1G Drawing Diagrams
ON Semiconductor
2 Pages / 0.08 MByte
MJD44H11-1G Application Note
ON Semiconductor
13 Pages / 0.34 MByte

MJD44H111 Documents

MJD44H11-1 Datasheet PDF
ON Semiconductor
IPAK NPN 80V 8A
MJD44H11-1 Datasheet PDF
Motorola
SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20W
MJD44H11-1 Datasheet PDF
Samsung
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3
MJD44H11-1G Datasheet PDF
ON Semiconductor
IPAK NPN 80V 8A
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