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MJD45H11T4G
$ 0.288
MJD45H11T4G Datasheet PDF (8 Pages)
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MJD45H11T4G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
90 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-80.0 V
Current Rating
-8.00 A
Case/Package
TO-252-3
Halogen Free Status
Halogen Free
Number of Positions
3 Position
Polarity
PNP
Power Dissipation
20 W
Breakdown Voltage (Collector to Emitter)
80 V
Continuous Collector Current
8A
hFE Min
40 @4A, 1V
Input Power (Max)
1.75 W
DC Current Gain (hFE)
60
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1.75 W

MJD45H11T4G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MJD45H11T4G Documents

ON Semiconductor
8 Pages / 0.12 MByte
ON Semiconductor
23 Pages / 1.06 MByte
ON Semiconductor
2 Pages / 0.08 MByte
ON Semiconductor
13 Pages / 0.34 MByte
ON Semiconductor
5 Pages / 0.04 MByte
ON Semiconductor
1 Pages / 0.14 MByte

MJD45H11T4 Documents

ST Microelectronics
Trans GP BJT PNP 80V 8A 20000mW 3Pin(2+Tab) DPAK T/R
ON Semiconductor
Trans GP BJT PNP 80V 8A 3Pin(2+Tab) DPAK T/R
Motorola
SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20W
Motorola
SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20W
ON Semiconductor
DPAK PNP 80V 8A
ST Microelectronics
DPAK PNP 80V 8A
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