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Part Datasheet Search > BJTs > ON Semiconductor > MJE15032G Datasheet PDF
MJE15032G
$ 0.731
MJE15032G Datasheet PDF (6 Pages)
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MJE15032G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
30 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
250 V
Current Rating
8.00 A
Case/Package
TO-220-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
50 W
Breakdown Voltage (Collector to Emitter)
250 V
Thermal Resistance
2.5℃/W (RθJC)
Continuous Collector Current
8A
hFE Min
10 @2A, 5V
Input Power (Max)
2 W
DC Current Gain (hFE)
70
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
2000 mW

MJE15032G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10.28 mm
Size-Width
4.83 mm
Size-Height
9.28 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

MJE15032G Documents

ON Semiconductor
6 Pages / 0.06 MByte
ON Semiconductor
20 Pages / 2.6 MByte
ON Semiconductor
2 Pages / 0.02 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
5 Pages / 0.15 MByte
ON Semiconductor
1 Pages / 0.13 MByte

MJE15032 Documents

ON Semiconductor
Trans GP BJT NPN 250V 8A 3Pin(3+Tab) TO-220AB Rail
Multicomp
MULTICOMP MJE15032 Bipolar (BJT) Single Transistor, NPN, 250V, 50W, 8A, 50 hFE
Continental Device
50W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 8A Ic, 50 - hFE
Motorola
8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS 50W
Inchange Semiconductor
Transistor
ON Semiconductor
TO-220AB NPN 250V 8A
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