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MJL3281AG
$ 2.463
MJL3281AG Datasheet PDF (5 Pages)
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MJL3281AG Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
30 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
15.0 A
Case/Package
TO-264-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
200 W
Gain Bandwidth Product
30 MHz
Breakdown Voltage (Collector to Emitter)
260 V
Thermal Resistance
0.625℃/W (RθJC)
Continuous Collector Current
15A
hFE Min
75 @5A, 5V
hFE Max
150
Input Power (Max)
200 W
DC Current Gain (hFE)
175
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
200000 mW

MJL3281AG Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
20.3 mm
Size-Width
5.3 mm
Size-Height
26.4 mm
Operating Temperature
-65℃ ~ 150℃

MJL3281AG Documents

ON Semiconductor
5 Pages / 0.1 MByte
ON Semiconductor
15 Pages / 1.35 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
1 Pages / 0.13 MByte

MJL3281 Documents

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Complementary Bipolar Power Transistors
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15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200W
ON Semiconductor
TO-3BPL NPN 200V 15A
ON Semiconductor
TO-3BPL NPN 200V 15A
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Bipolar Transistors - BJT 15A 230V 200W NPN
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