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Part Datasheet Search > BJTs > ON Semiconductor > MMBT5551LT1G Datasheet PDF
MMBT5551LT1G
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MMBT5551LT1G Datasheet PDF (6 Pages)
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MMBT5551LT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
160 V
Current Rating
600 mA
Case/Package
SOT-23-3
Power Rating
0.225 W
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
225 mW
Breakdown Voltage (Collector to Emitter)
160 V
Continuous Collector Current
0.6A
hFE Min
80 @10mA, 5V
hFE Max
250
Input Power (Max)
225 mW
DC Current Gain (hFE)
80
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

MMBT5551LT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MMBT5551LT1G Documents

ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
14 Pages / 0.05 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
1 Pages / 0.13 MByte

MMBT5551LT1 Documents

ON Semiconductor
SOT-23 NPN 160V 0.06A
Motorola
Trans Ss Npn 140V Hv Sot23
Micro Commercial Components
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
Leshan Radio
High Voltage Transistors(NPN Silicon)
SynSemi
Small Signal Bipolar Transistor, 0.6A I(C), NPN
DB Lectro
Transistor
Jiangsu Changjiang Electronics Technology
Transistor
ON Semiconductor
SOT-23 NPN 160V 0.6A
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