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MMBTH10LT1G Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

BJTs

Case Package:

SOT-23-3

Description:

Trans RF BJT NPN 25V 225mW Automotive 3Pin SOT-23 T/R

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Symbol

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Documentation:

MMBTH10LT1G Datasheet (5 Pages)

Package Outline Dimension on5 Page

Package Footprint Pad Layout on5 Page

Part Numbering System on1 Page 5 Page

MMBTH10LT1G Datasheet PDF (5 Pages)

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MMBTH10LT1G Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Frequency

650 MHz

Number of Pins

3 Pin

Voltage Rating (DC)

25.0 V

Current Rating

4.00 mA

Case/Package

SOT-23-3

Halogen Free Status

Halogen Free

Number of Positions

3 Position

Polarity

NPN

Power Dissipation

225 mW

Breakdown Voltage (Collector to Emitter)

25 V

hFE Min

60 @4mA, 10V

Input Power (Max)

225 mW

DC Current Gain (hFE)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

225 mW

View Datasheet >

MMBTH10LT1G Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Cut Tape (CT)

Material

Silicon

Size-Length

3.04 mm

Size-Width

1.4 mm

Size-Height

1.01 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

MMBTH10LT1G Environmental

MMBTH10LT1G Export Classifications

MMBTH10LT1G Function Overview

MMBTH10LT1G Documents

MMBTH10LT1G Datasheet

ON Semiconductor

5 Pages / 0.09 MByte

MMBTH10LT1G Other Datasheet PDF

ON Semiconductor

22 Pages / 1.31 MByte

MMBTH10LT1G Notice File

ON Semiconductor

5 Pages / 0.31 MByte

MMBTH10LT1G Product Catalog

ON Semiconductor

6 Pages / 0.05 MByte

MMBTH10LT1G Other References

ON Semiconductor

1 Pages / 0.13 MByte

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Trans RF BJT NPN 25V 225mW Automotive 3Pin SOT-23 T/R

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