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Part Datasheet Search > BJTs > ON Semiconductor > NJW21193G Datasheet PDF
NJW21193G
$ 2.185
NJW21193G Datasheet PDF (8 Pages)
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NJW21193G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
4 MHz
Number of Pins
3 Pin
Case/Package
TO-3-3
Number of Positions
3 Position
Polarity
PNP
Power Dissipation
200 W
Breakdown Voltage (Collector to Emitter)
250 V
Continuous Collector Current
16A
hFE Min
20
hFE Max
70
Input Power (Max)
200 W
DC Current Gain (hFE)
8
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
200 mW

NJW21193G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
15.8 mm
Size-Width
5 mm
Size-Height
20.1 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

NJW21193G Documents

ON Semiconductor
8 Pages / 0.17 MByte
ON Semiconductor
10 Pages / 1.67 MByte
ON Semiconductor
2 Pages / 0.04 MByte
ON Semiconductor
7 Pages / 0.12 MByte
ON Semiconductor
9 Pages / 1.57 MByte

NJW21193 Documents

ON Semiconductor
TO-3P PNP 250V 16A
ON Semiconductor
TO-3P PNP 250V 16A
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