NTD5867NLT4G Datasheet PDF - ON Semiconductor

●The NTD5867NLT4G from On Semiconductor is a surface mount, 60V N channel power MOSFET in DPAK package. This device features high current capability, low RDS (on) and avalanche tested thus resulting in minimal conduction losses, robust load performance and voltage overstress safeguard. This MOSFET is used for LED backlighting, DC to DC converter, motor driver and UPS inverter.

● Drain to source voltage (Vds) is 600V

● Gate to source voltage of ±20V(continuous)

● Continuous drain current (Id) is 20A

● Power dissipation (Pd) is 36W

● Operating junction temperature range from -55°C to 150°C

● Gate threshold voltage of 1.8V

● Low on state resistance of 26mohm at Vgs 10V