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Part Datasheet Search > MOSFETs > ON Semiconductor > NTS2101PT1G Datasheet PDF
NTS2101PT1G
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NTS2101PT1G Datasheet PDF (5 Pages)
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NTS2101PT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-8.00 V
Current Rating
-1.40 A
Case/Package
SOT-323-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.1 Ω
Polarity
P-Channel
Power Dissipation
290 mW
Threshold Voltage
700 mV
Drain to Source Voltage (Vds)
8 V
Breakdown Voltage (Drain to Source)
8 V
Breakdown Voltage (Gate to Source)
±8.00 V
Continuous Drain Current (Ids)
1.40 A
Rise Time
15 ns
Input Capacitance (Ciss)
640pF @8V(Vds)
Input Power (Max)
290 mW
Fall Time
18 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
290mW (Ta)

NTS2101PT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2.2 mm
Size-Width
1.24 mm
Size-Height
0.9 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

NTS2101PT1G Documents

ON Semiconductor
5 Pages / 0.05 MByte
ON Semiconductor
7 Pages / 0.1 MByte
ON Semiconductor
1 Pages / 0.15 MByte

NTS2101PT1 Documents

ON Semiconductor
SC-70P-CH 8V 1.4A
ON Semiconductor
SC-70P-CH 8V 1.4A
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