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STGW20NC60VD
$ 1.897
STGW20NC60VD Datasheet PDF (13 Pages)
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STGW20NC60VD Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
30.0 A
Case/Package
TO-247-3
Power Rating
200 W
Number of Positions
3 Position
Polarity
N-Channel
Power Dissipation
200 W
Rise Time
11.5 ns
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
44 ns
Input Power (Max)
200 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200000 mW

STGW20NC60VD Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.75 mm
Size-Width
5.15 mm
Size-Height
20.15 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STGW20NC60VD Documents

ST Microelectronics
13 Pages / 0.87 MByte
ST Microelectronics
17 Pages / 0.82 MByte
ST Microelectronics
32 Pages / 0.51 MByte
ST Microelectronics
1 Pages / 0.13 MByte

STGW20NC60 Documents

ST Microelectronics
IGBT Single Transistor, 60A, 2.5V, 200W, 600V, TO-247, 3Pins
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 200000mW 3Pin(3+Tab) TO-247 Tube
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