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STGW39NC60VD
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STGW39NC60VD Datasheet PDF (15 Pages)
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STGW39NC60VD Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
40.0 A
Case/Package
TO-247-3
Power Rating
250 W
Number of Positions
3 Position
Polarity
N-Channel
Power Dissipation
250 W
Gate Charge
126 nC
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
40.0 A
Rise Time
13 ns
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
45 ns
Input Power (Max)
250 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
250 W

STGW39NC60VD Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.75 mm
Size-Width
5.15 mm
Size-Height
20.15 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STGW39NC60VD Documents

ST Microelectronics
15 Pages / 0.41 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
30 Pages / 0.31 MByte

STGW39NC60 Documents

ST Microelectronics
IGBT Single Transistor, 80A, 2.5V, 250W, 600V, TO-247, 3Pins
ST Microelectronics
IGBT Transistors 40 A - 600 V Very Fast IGBT
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