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STN1HNK60 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

TO-261-4

Description:

N-CHANNEL 600V - 8Ω - 1A DPAK/IPAK/TO-92/SOT-223 SUPERMESH MOSFET

Pictures:

3D Model

Symbol

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Pinout

Product Pictures

Documentation:

STN1HNK60 Datasheet (15 Pages)

STN1HNK60 Datasheet PDF (15 Pages)

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STN1HNK60 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Voltage Rating (DC)

600 V

Current Rating

400 mA

Case/Package

TO-261-4

Number of Channels

1 Channel

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

8 Ω

Polarity

N-Channel

Power Dissipation

3.3 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

600 V

Breakdown Voltage (Drain to Source)

600 V

Continuous Drain Current (Ids)

500 mA

Rise Time

5 ns

Input Capacitance (Ciss)

156pF @25V(Vds)

Input Power (Max)

3.3 W

Fall Time

25 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

3.3W (Tc)

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STN1HNK60 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

6.5 mm

Size-Width

3.5 mm

Size-Height

1.8 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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STN1HNK60 Environmental

STN1HNK60 Function Overview

STN1HNK60 Documents

STN1HNK60 Datasheet

ST Microelectronics

15 Pages / 0.41 MByte

STN1HNK60 Packaging

ST Microelectronics

16 Pages / 0.45 MByte

STN1HNK60 Notice File

ST Microelectronics

5 Pages / 0.04 MByte

STN1HNK60 Other References

ST Microelectronics

1 Pages / 0.13 MByte

STN1 Documents

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