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Part Datasheet Search > MOSFETs > ST Microelectronics > STP110N8F6 Datasheet PDF
STP110N8F6
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STP110N8F6 Datasheet PDF (14 Pages)
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STP110N8F6 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
5.6 mΩ
Polarity
N-CH
Power Dissipation
200 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
80 V
Breakdown Voltage (Drain to Source)
80 V
Continuous Drain Current (Ids)
110A
Rise Time
61 ns
Input Capacitance (Ciss)
9130pF @40V(Vds)
Fall Time
48 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200W (Tc)

STP110N8F6 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
15.75 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

STP110N8F6 Documents

ST Microelectronics
14 Pages / 0.52 MByte
ST Microelectronics
14 Pages / 0.52 MByte
ST Microelectronics
13 Pages / 0.53 MByte

STP110N8 Documents

ST Microelectronics
TO-220 N-CH 80V 110A
ST Microelectronics
TO-220 N-CH 80V 80A
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