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Part Datasheet Search > MOSFETs > ST Microelectronics > STS4DNF60L Datasheet PDF
STS4DNF60L
Part 3D Model
$ 0.221
STS4DNF60L Datasheet PDF (12 Pages)
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STS4DNF60L Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Voltage Rating (DC)
60.0 V
Current Rating
4.00 A
Case/Package
SOIC-8
Number of Channels
2 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.045 Ω
Polarity
N-Channel, Dual N-Channel
Power Dissipation
2.5 W
Threshold Voltage
1.7 V
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Breakdown Voltage (Gate to Source)
±15.0 V
Continuous Drain Current (Ids)
4.00 A
Rise Time
28 ns
Input Capacitance (Ciss)
1030pF @25V(Vds)
Input Power (Max)
2 W
Fall Time
10 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2000 mW

STS4DNF60L Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.25 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STS4DNF60L Documents

ST Microelectronics
12 Pages / 0.57 MByte
ST Microelectronics
9 Pages / 0.19 MByte
ST Microelectronics
8 Pages / 0.21 MByte
ST Microelectronics
1 Pages / 0.13 MByte

STS4DNF60 Documents

ST Microelectronics
N - CHANNEL 60V - 0.045Ω - 4A SO-8 STripFET POWER MOSFET
ST Microelectronics
SO N-CH 60V 4A
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