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STW11NK100Z
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STW11NK100Z Datasheet PDF (14 Pages)
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STW11NK100Z Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
1.00 kV
Current Rating
8.30 A
Case/Package
TO-247-3
Power Rating
230 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1.38 Ω
Polarity
N-Channel
Power Dissipation
230 W
Threshold Voltage
3.75 V
Drain to Source Voltage (Vds)
1000 V
Breakdown Voltage (Drain to Source)
1.00 kV
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
8.30 A
Rise Time
18 ns
Input Capacitance (Ciss)
3500pF @25V(Vds)
Input Power (Max)
230 W
Fall Time
55 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
230W (Tc)

STW11NK100Z Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.75 mm
Size-Width
5.15 mm
Size-Height
20.15 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STW11NK100Z Documents

ST Microelectronics
14 Pages / 0.3 MByte
ST Microelectronics
1 Pages / 0.37 MByte
ST Microelectronics
9 Pages / 0.23 MByte
ST Microelectronics
1 Pages / 0.12 MByte

STW11NK100 Documents

ST Microelectronics
Power MOSFET, N Channel, 8.3A, 1kV, 1.38Ω, 10V, 3.75V
Vishay Intertechnology
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