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Part Datasheet Search > BJTs > ON Semiconductor > TIP41CG Datasheet PDF
TIP41CG
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TIP41CG Datasheet PDF (5 Pages)
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TIP41CG Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
3 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
6.00 A
Case/Package
TO-220-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
65 W
Gain Bandwidth Product
3 MHz
Breakdown Voltage (Collector to Emitter)
100 V
Thermal Resistance
1.67℃/W (RθJC)
Continuous Collector Current
6A
hFE Min
15 @3A, 4V
Input Power (Max)
2 W
DC Current Gain (hFE)
3
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
2000 mW

TIP41CG Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10.28 mm
Size-Width
4.83 mm
Size-Height
15.75 mm
Operating Temperature
-65℃ ~ 150℃

TIP41CG Documents

ON Semiconductor
5 Pages / 0.2 MByte
ON Semiconductor
8 Pages / 0.26 MByte
ON Semiconductor
2 Pages / 0.02 MByte
ON Semiconductor
7 Pages / 0.13 MByte
ON Semiconductor
5 Pages / 0.15 MByte
ON Semiconductor
1 Pages / 0.13 MByte

TIP41 Documents

Fairchild
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Power Dissipation Pd: 2W;...
ON Semiconductor
TO-220-3 NPN 60V 6A
Central Semiconductor
Leaded Power Transistor General Purposeo
Bourns J.W. Miller
NPN SILICON POWER TRANSISTORS
Continental Device
PLASTIC POWER TRANSISTORS TO-220 Plastic Package
Secos
NPN Plastic-Encapsulate Transistor TO-220J
Micro Commercial Components
Silicon NPN Power Transistors TO-220
CJ
TO-220-3L NPN 40V 6000mA
Intersil
TIP41
Toshiba
TIP41
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