FDS4935 Datasheet PDF

●General Description

●This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

●Features

●• –7 A, –30 V  RDS(ON)= 23 mΩ@ VGS= –10 V

●                   RDS(ON)= 35 mΩ@ VGS= –4.5 V

●• Low gate charge (15nC typical)

●• Fast switching speed

●• High performance trench technology for extremely low RDS(ON)

●• High power and current handling capability

●Applications

●• Power management

●• Load switch

●• Battery protection