FQP13N10 Datasheet PDF

●The FQP13N10 is a 100V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This product is general usage and suitable for many different applications.

● Low gate charge

● 100% Avalanche tested

● Improved system reliability in PFC and soft switching topologies

● Switching loss improvements

● Lower conduction loss

● 175°C Maximum junction temperature rating