H11F3 Datasheet PDF

●DESCRIPTION

●The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.

●FEATURES

●As a remote variable resistor

●• ≤ 100Ω to ≥ 300 MΩ

●• ≥ 99.9% linearity

●• ≤ 15 pF shunt capacitance

●• ≥ 100 GΩ I/O isolation resistance

●As an analog switch

●• Extremely low offset voltage

●• 60 Vpk-pk signal capability

●• No charge injection or latch-up

●• ton, toff ≤ 15 µS

●• UL recognized (File #E90700)

●• VDE recognized (File #E94766)

●   – Ordering option ‘300’ (e.g. H11F1.300)

●APPLICATIONS

●As a variable resistor –

●• Isolated variable attenuator

●• Automatic gain control

●• Active filter fine tuning/band switching

●As an analog switch –

●• Isolated sample and hold circuit

●• Multiplexed, optically isolated A/D conversion